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Assertion and Reason on Reverse Biased Diode Characteristics

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R

Assertion A: A diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically.

Reason R: Below the critical voltage limit, only majority charge carriers flow which increases drastically above critical voltage.

choose the correct answer from the options given below

Options

A

Both A and R are true and R is the correct explanation of A

B

Both A and R are true but R is NOT the correct explanation of A

C

A is true but R is false

Correct
D

A is false but R is true

Topics & Concepts

Step-by-Step Solution

To determine the correct option, let us analyze the Assertion and Reason separately:

  1. Analysis of Assertion A: In a p-n junction diode under reverse-biased conditions, the external applied voltage reinforces the built-in potential barrier, which repels the majority charge carriers away from the junction.

    • Consequently, the current due to majority charge carriers becomes practically zero.
    • However, a very small current, known as the reverse saturation current, flows across the junction due to the thermal generation of minority charge carriers (electrons in the p-side and holes in the n-side).
    • This reverse saturation current is virtually independent of the applied voltage over a wide range.
    • When the reverse voltage reaches a critical limit known as the breakdown voltage (VBV_B), breakdown occurs (either Zener breakdown or Avalanche breakdown), resulting in a sharp and drastic increase in reverse current.

    Therefore, Assertion A is true.

  2. Analysis of Reason R:

    • Below the critical breakdown voltage, the reverse current is caused exclusively by the drift of minority charge carriers, not majority carriers.
    • Majority carriers are restricted from crossing the junction due to the widened depletion layer and increased potential barrier under reverse bias.

    Therefore, Reason R is false.

Conclusion: Since Assertion A is true and Reason R is false, the correct option is C.

Assertion and Reason on Reverse Biased Diode Characteristics | Physics PYQ Solution - JEE Challenger